SINGLE CRYSTAL ELECTROLUMINESCENT MATERIALS

[1] EFFICIENT RED-EMITTING P-N JUNCTIONS FORMED IN GAP BY SOLUTION GROWTH OF THICK LAYERS OF P-TYPE MATERIAL ON VAPOR-GROWN N-TYPE SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2977 - +

[2] ARCHER RJ, 1967, 1966 P GAAS S READ, P103

[3] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[4] ASHLEY KL, 1969, 1968 GAAS S P, P123

[5] AVEN M, 1967, PHYSICS CHEMISTRY 2

[6] BAILEY LG, 1967, T METALL SOC AIME, V239, P310

[7] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1968, 173 (03): : 762 - &

[8] Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3

[9] BERGH AA, 1969, BELL LAB REC, V47, P320

[10] BHARGAVA RN, PERSONAL COMMUNICATI

[1] EFFICIENT RED-EMITTING P-N JUNCTIONS FORMED IN GAP BY SOLUTION GROWTH OF THICK LAYERS OF P-TYPE MATERIAL ON VAPOR-GROWN N-TYPE SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2977 - +

[2] ARCHER RJ, 1967, 1966 P GAAS S READ, P103

[3] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[4] ASHLEY KL, 1969, 1968 GAAS S P, P123

[5] AVEN M, 1967, PHYSICS CHEMISTRY 2

[6] BAILEY LG, 1967, T METALL SOC AIME, V239, P310

[7] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1968, 173 (03): : 762 - &

[8] Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3

[9] BERGH AA, 1969, BELL LAB REC, V47, P320

[10] BHARGAVA RN, PERSONAL COMMUNICATI