EFFICIENT RED-EMITTING P-N JUNCTIONS FORMED IN GAP BY SOLUTION GROWTH OF THICK LAYERS OF P-TYPE MATERIAL ON VAPOR-GROWN N-TYPE SUBSTRATES

被引：6

作者：

ALLEN, HA

HENDERSON, GA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 06期

关键词：

D O I：

10.1063/1.1656716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2977 / +

页数：1

相关论文

共 4 条

[1] P-N JUNCTIONS IN GAP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY -2 PERCENT AT 25 DEGREES C
LOGAN, RA
WHITE, HG
TRUMBORE, FA
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (07) : 206 - &
[2] PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP
LORENZ, MR
PILKUHN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4094 - &
[3] INJECTION ELECTROLUMINESCENCE AT P-N JUNCTIONS IN ZINC-DOPED GALLIUM PHOSPHIDE
STARKIEWICZ, J
ALLEN, JW
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) : 881 - &
[4] EFFICIENT ELECTROLUMINESCENCE IN GAP P-N JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY ON VAPOR-GROWN SUBSTRATES
TRUMBORE, FA
KOWALCHIK, M
WHITE, HG
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1987 - +