GAAS-GAALAS HETEROSTRUCTURE LASERS ON SEMI-INSULATING SUBSTRATES

被引：6

作者：

LEE, CP ^{[1
]}

MARGALIT, S ^{[1
]}

YARIV, A ^{[1
]}

机构：

[1] CALTECH, PASADENA, CA 91125 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 10期

关键词：

D O I：

10.1109/T-ED.1978.19260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1250 / 1256

页数：7

共 13 条

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[6] DOUBLE-HETEROSTRUCTURE GAAS-GAAIAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING CARRIER CROWDING [J].

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[7] GAAS-GAALAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING LATERALLY DIFFUSED JUNCTIONS [J].

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URY, I ;

YARIV, A .

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[8] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J].

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[9] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J].

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[10]

NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670

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