SINGLE-PARTICLE AND TRANSPORT SCATTERING TIMES IN NARROW GAAS ALXGA1-XAS QUANTUM-WELLS

被引：60

作者：

BOCKELMANN, U ^{[1
]}

ABSTREITER, G ^{[1
]}

WEIMANN, G ^{[1
]}

SCHLAPP, W ^{[1
]}

机构：

[1] DEUTSCH BUNDESPOST,FOSCHUNGSINST,W-6100 DARMSTADT,GERMANY

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.41.7864

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The in-plane motion of electrons in narrow GaAs/AlxGa1-xAs multiple quantum wells is studied experimentally and theoretically as a function of the electron density ns and the well width Lz. Two characteristic lifetimese the single-particle relaxation time s and the transport scattering time te are obtained from magnetotransport measurements. By comparing s and t with detailed calculations, the contributions of interface roughness, remote impurity, and alloy disorder scattering are investigated separately. © 1990 The American Physical Society.

引用

页码：7864 / 7867

页数：4

共 13 条

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