CD1-XZNXTE4 GAMMA-RAY DETECTORS

被引：129

作者：

BUTLER, JF

LINGREN, CL

DOTY, FP

机构：

[1] Aurora Technologies Corporation, San Diego, Ca, 92121

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 04期

关键词：

D O I：

10.1109/23.159673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of an effort to improve the performance at CdTe detectors by addressing starting element purity and crystallinity are described Structural perfection was improve alloying with ZnTe to form crystals of Cd1-xZnxTe. Crystals were grown by a high pressure Bridgman method. Evidence for significant enhancements of the mu-tau products resulting from these efforts is presented. Features of Cd0.8Zn0.2Te detectors include: energy resolutions at 122 KeV < 7%; resistivity approximately 10(11) ohm-cm; no polarization effects; and temperature for useful operation up to 100C. The large sizes (eg, 3 Kg, 7.5-cm diameter) and excellent homogeneity of the crystals make it possible to produce detectors and imaging arrays with areas of several square inches.

引用

页码：605 / 609

页数：5

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