DIFFUSION OF GALLIUM IN SILICON

[1] BARDEEN, 1946, J CHEM PHYS, V14, P4

[2] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) : 547 - 552

[3] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[4] Johnson WA, 1942, T AM I MIN MET ENG, V147, P331

[5] MILLEA MF, 1958, B AM PHYS SOC 2, V3, P102

[6] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[7] REISS, 1956, BELL SYSTEM TECH J, V35, P535

[8] EFFECT OF HEAVY DOPING ON THE SELF-DIFFUSION OF GERMANIUM [J]. PHYSICAL REVIEW, 1957, 106 (01): : 73 - 75

[1] BARDEEN, 1946, J CHEM PHYS, V14, P4

[2] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) : 547 - 552

[3] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[4] Johnson WA, 1942, T AM I MIN MET ENG, V147, P331

[5] MILLEA MF, 1958, B AM PHYS SOC 2, V3, P102

[6] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[7] REISS, 1956, BELL SYSTEM TECH J, V35, P535

[8] EFFECT OF HEAVY DOPING ON THE SELF-DIFFUSION OF GERMANIUM [J]. PHYSICAL REVIEW, 1957, 106 (01): : 73 - 75