HIGH-POWER DIODE-LASER-PUMPED INASSB/GASB AND GAINASSB/GASB LASERS EMITTING FROM 3-MU-M TO 4-MU-M

被引：45

作者：

LE, HQ ^{[1
]}

TURNER, GW ^{[1
]}

EGLASH, SJ ^{[1
]}

CHOI, HK ^{[1
]}

COPPETA, DA ^{[1
]}

机构：

[1] TUFTS UNIV,DEPT PHYS,MEDFORD,MA 02155

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.111548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diode-array-pumped GaInAsSb/GaSb and InAsSb/GaSb double heterostructure lasers operated at 85 K yielded 95 mW average and 1.5 W peak power per facet at 3 mu m, and 50 mW average and 0.8 W peak power facet at 4 mu m. The highest operational temperature was 210 K for the 3-mu m quaternary and 150 K for the 4-mu m ternary.

引用

页码：152 / 154

页数：3

共 14 条

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