DIODE-LASER-PUMPED INGAAS/GAAS/ALGAAS HETEROSTRUCTURE LASERS WITH LOW INTERNAL LOSS AND 4-W AVERAGE POWER

被引：9

作者：

LE, HQ

GOODHUE, WD

MAKI, PA

DICECCA, S

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.109657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optically pumped InGaAs/GaAs/AlGaAs heterostructure lasers exhibit differential quantum efficiencies that are not sensitive to output coupling or active length, indicating low free carrier absorption loss. A broad-stripe 2.5-mm-long device yielded 4-W average power and 20-W peak power.

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收藏

页码：1465 / 1467

页数：3

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