A THERMAL-MELTING-MODEL CALCULATION OF PULSED LASER ANNEALING OF GAAS

[1] BADAWI MH, 1980, LASER ELECTRON BEAM, P354

[2] LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 485 - 488

[3] CHANG LL, 1980, HDB SEMICONDUCTORS, V3, P563

[4] Eisen F. H., 1980, LASER ELECTRON BEAM, P309

[5] FERRIS SD, 1979, LASER SOLID INTERACT

[6] GAMO K, 1979, LASER SOLID INTERACT, P591

[7] HOONHOUT D, 1980, THESIS U AMSTERDAM

[8] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[9] RICHTEMEYER RD, 1967, DIFFERENCE METHODS I

[10] TANDON JL, 1979, LASER SOLID INTERACT, P616

[1] BADAWI MH, 1980, LASER ELECTRON BEAM, P354

[2] LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 485 - 488

[3] CHANG LL, 1980, HDB SEMICONDUCTORS, V3, P563

[4] Eisen F. H., 1980, LASER ELECTRON BEAM, P309

[5] FERRIS SD, 1979, LASER SOLID INTERACT

[6] GAMO K, 1979, LASER SOLID INTERACT, P591

[7] HOONHOUT D, 1980, THESIS U AMSTERDAM

[8] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[9] RICHTEMEYER RD, 1967, DIFFERENCE METHODS I

[10] TANDON JL, 1979, LASER SOLID INTERACT, P616