ELECTRONIC-PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW-DISCHARGE PLASMA

[1] SIGN OF HALL-EFFECT IN HOPPING CONDUCTION [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (05): : 1189 - 1198

[2] Friedman L., 1971, J NONCRYST SOLIDS, V6, P329

[3] LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1084 - 1086

[4] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[5] HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (05): : 1173 - 1187

[6] ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L305 - L308

[7] THE HALL-EFFECT IN POLYCRYSTALLINE AND POWDERED SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1980, 43 (11) : 1263 - 1307

[8] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883

[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[10] SPEAR WE, 1978, PHIL MAG B, V38, P295

[1] SIGN OF HALL-EFFECT IN HOPPING CONDUCTION [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (05): : 1189 - 1198

[2] Friedman L., 1971, J NONCRYST SOLIDS, V6, P329

[3] LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1084 - 1086

[4] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[5] HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (05): : 1173 - 1187

[6] ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L305 - L308

[7] THE HALL-EFFECT IN POLYCRYSTALLINE AND POWDERED SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1980, 43 (11) : 1263 - 1307

[8] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883

[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[10] SPEAR WE, 1978, PHIL MAG B, V38, P295