EPITAXIAL LINBO3 THIN-FILMS ON SAPPHIRE SUBSTRATES GROWN BY SOLID SOURCE MOCVD

被引：36

作者：

LU, Z

HISKES, R

DICAROLIS, SA

ROUTE, RK

FEIGELSON, RS

LEPLINGARD, F

FOUQUET, JE

机构：

[1] STANFORD UNIV,CTR MAT RES,STANFORD,CA 94305

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

[3] HEWLETT PACKARD CORP,PAL0 ALTO,CA 94303

来源：

JOURNAL OF MATERIALS RESEARCH | 1994年 / 9卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.1994.2258

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

C-axis LiNbO3 epitaxial films have been grown on c-plane sapphire substrates by solid source metal-organic chemical vapor deposition (MOCVD) using the tetramethylheptanedionate sources, Li(thd) and Nb(thd)4. Stoichiometric LiNbO3 films were deposited from Li(thd)-rich source compositions. Rocking curve FWHM values as low as 0.044-degrees were measured on films grown at 710-degrees-C. Rocking curve peak widths became broader as films were grown at progressively lower substrate temperatures. Single prism coupling experiments revealed clearly visible optical waveguiding, with optical attenuation values as low as 2 dB/cm in the best films.

引用

页码：2258 / 2263

页数：6

共 23 条

[1] GROWTH OF THIN-FILM LITHIUM-NIOBATE BY MOLECULAR-BEAM EPITAXY [J].