TANTALUM DOPING AND HIGH RESISTIVITY IN ALUMINIUM ANTIMONIDE

被引：7

作者：

SHAW, D

MCKELL, HD

机构：

来源：

BRITISH JOURNAL OF APPLIED PHYSICS | 1963年 / 14卷 / 05期

关键词：

D O I：

10.1088/0508-3443/14/5/331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：295 / &

共 17 条

[1] GALLIUM ARSENIDE AS A SEMI-INSULATOR [J].

ALLEN, JW .

NATURE, 1960, 187 (4735) :403-405

[2] THE PREPARATION AND PROPERTIES OF ALUMINUM ANTIMONIDE [J].

ALLRED, WP ;

MEFFERD, WL ;

WILLARDSON, RK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (02) :117-122

[3] ZONE MELTING AND CRYSTAL PULLING EXPERIMENTS WITH AISB [J].

ALLRED, WP ;

PARIS, B ;

GENSER, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (02) :93-96

[4] ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE [J].

BLANC, J ;

WEISBERG, LR .

NATURE, 1961, 192 (479) :155-&

[5] PREPARATION OF HIGH-PURITY INDIUM ARSENIDE [J].

EFFER, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (04) :357-361

[6] PROPERTIES OF SEMI-INSULATING GAAS [J].

GOOCH, CH ;

HOLEMAN, BR ;

HILSUM, C .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2069-&

[7] INFRARED LATTICE REFLECTION SPECTRA OF III-V COMPOUND SEMICONDUCTORS [J].

HASS, M ;

HENVIS, BW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) :1099-+

[8] MEASUREMENT OF THE SEGREGATION COEFFICIENTS OF IMPURITY ELEMENTS IN ALUMINUM ANTIMONIDE [J].

HAZELBY, D ;

PARMEE, JL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (02) :144-145

[9] PREPARATION AND PROPERTIES OF ALUMINUM ANTIMONIDE [J].

HERCZOG, A ;

HABERECHT, RR ;

MIDDLETON, AE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (09) :533-540

[10]

HILSUM C, 1961, SEMICONDUCTING COMPO

← 1 2 →