DYNAMICS OF HOT CARRIER COOLING IN PHOTOEXCITED GAAS

被引：172

作者：

LEHENY, RF

SHAH, J

FORK, RL

SHANK, CV

MIGUS, A

机构：

[1] Bell Telephone Laboratories, Incorporated, Holmdel, NJ

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 31卷 / 11期

关键词：

D O I：

10.1016/0038-1098(79)90393-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Carrier relaxation following excitation with subpicosecond optical pulses, determined from time resolved nearband gap transmission spectrum changes, is described for GaAs. For n < 5×1017cm-3 the observed relaxation can be related to carrier-phonon interaction, but at higher densities the rate of relaxation is significantly slowed, possibly due to carrier screening. © 1979.

引用

页码：809 / 813

页数：5

共 10 条

[1]

CONWELL EM, 1967, SOLID STATE PHYSI S9

[2] SCREENING EFFECTS IN POLAR SEMICONDUCTORS [J].