PHOTO-VOLTAIC PROPERTIES OF P-N-JUNCTIONS IN CULNS2

被引：32

作者：

TELL, B ^{[1
]}

THIEL, FA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.325604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-n junctions have been formed in CuInS2 by diffusing an n layer into p-type bulk material. When tested as photovoltaic detectors, typical diodes exhibit a maximum quantum efficiency of ∼15% near 0.8 μm.

引用

页码：5045 / 5046

页数：2

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