PHOTON-ASSISTED TUNNELING IN SEQUENTIAL RESONANT TUNNELING DEVICES

被引：8

作者：

CHITTA, VA

DEBEKKER, REM

MAAN, JC

HAWKSWORTH, SJ

CHAMBERLAIN, JM

HENINI, M

HILL, G

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

[2] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 03期

关键词：

D O I：

10.1088/0268-1242/7/3/028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the influence of far infrared radiation on the tunnel current of GaAs/(GaAl)As double-barrier resonant tunnelling devices. From the analysis of the far infrared radiation response, as a function of bias voltage, for different radiation energies, an upper limit for the scattering time in the well is determined. The scattering time is found to be shorter than the tunnelling time, which indicates that tunnelling is mainly sequential in the samples studied.

引用

页码：432 / 435

页数：4

共 13 条

[1]

Abrikosov A. A., 1963, METHODS QUANTUM FIEL

[2] COHERENT AND SEQUENTIAL TUNNELING IN SERIES BARRIERS [J].