LASER SCANNING TECHNIQUE FOR THE DETECTION OF MINORITY-CARRIER LIFETIME INHOMOGENEITIES IN SILICON USING LIQUID RECTIFYING CONTACTS

被引：2

作者：

DRUGGE, B ^{[1
]}

NORDLANDER, E ^{[1
]}

EDLUND, P ^{[1
]}

机构：

[1] UNIV UPPSALA, INST TECHNOL, DEPT ELECTR, S-75105 UPPSALA, SWEDEN

来源：

PHYSICA SCRIPTA | 1981年 / 24卷 / 02期

关键词：

D O I：

10.1088/0031-8949/24/2/008

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：392 / 395

页数：4

共 18 条

[1]

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[2]

CARDONA M, 1969, MODULATION SPECTROSC, P223

[3]

DRUGGE B, UNPUBLISHED

[4] LASER SCANNING TECHNIQUE FOR THE DETECTION OF RESISTIVITY AND LIFETIME INHOMOGENEITIES IN SEMICONDUCTOR-DEVICES [J].

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PHYSICA SCRIPTA, 1978, 18 (06) :357-363

[5]

ENGSTROM O, 1980, ASTM STP712 AM SOC T, P239

[6]

ENGSTROM O, 1975, J APPL PHYS, V46, P931

[7]

GRAFF K, 1973, SEMICONDUCTOR SILICO, P176

[8] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].

HEIMAN, FP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :781-+

[9] HARMONIC GENERATION - RECTIFICATION - AND LIFETIME EVALUATION WITH STEP RECOVERY DIODE [J].

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PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (07) :1665-&

[10] MINORITY-CARRIER DIFFUSION LENGTH MEASUREMENTS IN CDTE BY A PHOTOCURRENT TECHNIQUE [J].

LASTRASMARTINEZ, A ;

RACCAH, PM ;

TRIBOULET, R .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :469-471

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