NANOCRYSTALLINE GE IN SIO2 BY ANNEALING OF GEXSI1-XO2 IN HYDROGEN

被引：30

作者：

LIU, WS ^{[1
]}

CHEN, JS ^{[1
]}

NICOLET, MA ^{[1
]}

ARBETENGELS, V ^{[1
]}

WANG, KL ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,LOS ANGELES,CA 90024

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have synthesized nanocrystalline Ge in vitreous SiO2 by annealing amorphous Ge0.38Si0.62O2 in hydrogen at 700-degrees-C. The germanium dioxide in Ge0.38Si0.62O2 is thermodynamically unstable in the presence of hydrogen and thus precipitates out as elemental Ge. Elemental Si is not needed in this reduction process. Cross-sectional transmission electron microscopy reveals that the nucleation process is homogeneous, leading to a uniform distribution of small Ge crystallites imbedded in the remaining vitreous SiO2.

引用

页码：3321 / 3323

页数：3

共 7 条

[1] INSTABILITY OF A GEXSI1-XO2 FILM ON A GEXSI1-X LAYER [J].