VISIBLE PHOTOLUMINESCENCE OF GE MICROCRYSTALS EMBEDDED IN SIO2 GLASSY MATRICES

被引：589

作者：

MAEDA, Y ^{[1
]}

TSUKAMOTO, N

YAZAWA, Y

KANEMITSU, Y

MASUMOTO, Y

机构：

[1] Kyoto Univ, Dept Energy Sci & Technol, Sakyo Ku, Kyoto 6068501, JAPAN

[2] Univ Tsukuba, Inst Phys, Tsukuba 305, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 24期

关键词：

D O I：

10.1063/1.105773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ge microcrystals embedded in SiO2 glassy matrices were formed by a radio-frequency magnetron cosputtering technique and then annealed at 800-degrees-C for 30 min. The average radius of the Ge microcrystals in SiO2 was determined to be about 3 nm by means of Raman spectroscopy and high resolution electron microscope. The annealed sample showed a strong room temperature luminescence with a peak at 2.18 eV. This is consistent with quantum confinement of electrons and holes.

引用

页码：3168 / 3170

页数：3

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