GIANT TEMPERATURE DEPENDENCE OF WORK FUNCTION OF GAP

被引：15

作者：

CHO, AY

ARTHUR, JR

机构：

[1] Bell Telephone Laboratories, Murray Hill

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 22卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.22.1180

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Both the clean and cesiated (̄1̄1̄1) surfaces of n- and p-type GaP show very large shifts of work function upon cooling when the surface is illuminated with 1.7-eV light: Φ increases for p-type and decreases for n-type material. This is attributed to reduction of surface charge by photoexcitation of electrons into or out of surface states. The surface-state density is ∼4 × 1012 cm-2 and is unaffected by submonolayer quantities of Cs. © 1969 The American Physical Society.

引用

页码：1180 / &

共 5 条

[1] ENERGY STRUCTURE IN PHOTOELECTRIC EMISSION FROM CS-COVERED SILICON AND GERMANIUM [J].