THE EFFECT OF MICROWAVE-PLASMA ON DECOMPOSITION AND OXIDATION OF BA(THD)2

被引：6

作者：

SUGII, N

SAITO, S

IMAGAWA, K

SAITO, S

KANEHORI, K

TAKAGI, K

机构：

[1] Central Research Laboratory, Hitachi Ltd, Kokubunji Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 6B期

关键词：

OXIDE SUPERCONDUCTOR; CHEMICAL VAPOR DEPOSITION; PLASMA-ENHANCEMENT; BA(THD)2; AUGER ELECTRON SPECTROSCOPY; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION;

D O I：

10.1143/JJAP.30.L1118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of microwave-plasma on the decomposition and the oxidation of Ba(THD)2 is studied for estimating the possibility of low-temperature chemical vapor deposition of oxide superconducting thin film. Pseudo in situ auger electron spectroscopy clarifies that carbon-free film is grown with oxygen-plasma at over 400-degrees-C. Pseudo in situ electron diffraction analysis indicated that the film grown at over 400-degrees-C is crystalline BaO. These results support the possibility that oxide superconducting film can grow at around 400-degrees-C by chemical vapor deposition using THD complexes.

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收藏

页码：L1118 / L1120

页数：3

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