PINNING POTENTIAL OF STACKING FAULT-RELATED DISLOCATIONS IN YBA2CU3O7

被引:9
作者
KVAM, EP
机构
[1] Materials Engineering, Purdue University, West Lafayette
来源
PHYSICA C | 1992年 / 200卷 / 3-4期
关键词
D O I
10.1016/0921-4534(92)90394-R
中图分类号
O59 [应用物理学];
学科分类号
摘要
The pinning potential of the 1/6[031] type dislocation has been calculated. This dislocation bounds the excess Cu-O layer defect commonly observed in YBa2Cu3O7. It was found that there is a strong pinning anisotropy between edge dislocations lying along [100] and [010]. For the former, a repulsive potential of about 30 meV is found, while the latter exhibits an attractive interaction of less than 1/3 this magnitude. This potential is short-range (about 2xi), indicating that these dislocations would act as distributed point-like pinning sites.
引用
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页码:409 / 412
页数:4
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