PINNING POTENTIAL OF STACKING FAULT-RELATED DISLOCATIONS IN YBA2CU3O7

被引：9

作者：

KVAM, EP

机构：

[1] Materials Engineering, Purdue University, West Lafayette

来源：

PHYSICA C | 1992年 / 200卷 / 3-4期

关键词：

D O I：

10.1016/0921-4534(92)90394-R

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The pinning potential of the 1/6[031] type dislocation has been calculated. This dislocation bounds the excess Cu-O layer defect commonly observed in YBa2Cu3O7. It was found that there is a strong pinning anisotropy between edge dislocations lying along [100] and [010]. For the former, a repulsive potential of about 30 meV is found, while the latter exhibits an attractive interaction of less than 1/3 this magnitude. This potential is short-range (about 2xi), indicating that these dislocations would act as distributed point-like pinning sites.

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页码：409 / 412

页数：4

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