LOW DARK CURRENT AND HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR ON SULFUR-TREATED INP

被引：13

作者：

HAN, IK ^{[1
]}

HER, J ^{[1
]}

BYUN, YT ^{[1
]}

LEE, S ^{[1
]}

WOO, DH ^{[1
]}

ILLEE, J ^{[1
]}

KIM, SH ^{[1
]}

KANG, KN ^{[1
]}

PARK, HL ^{[1
]}

机构：

[1] YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12A期

关键词：

MSM PD; INP; SULFUR TREATMENT; HIGH SPEED; SCHOTTKY BARRIER HEIGHT;

D O I：

10.1143/JJAP.33.6454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a metal-semiconductor-metal (MSM) photodetector on sulfur-treated undoped InP. We show that the dark current and capacitance of the sulfur-treated detector are 100 times lower and 30% smaller than those of the untreated detector, respectively. The improved performance of the detector characteristics is understood in terms of Fermi level depinning and the existence of a thin layer of InPxSy between the contact metal and semiconductor due to sulfur treatment. We found that it is necessary to anneal the sulfur-treated substrates at 270 degrees C to obtain such improved device characteristics. The reason is attributed- to the formation of thermally stable In-S bonds.

引用

页码：6454 / 6457

页数：4

共 26 条

[1] A PROPOSED HYDROGENATION NITRIDIZATION PASSIVATION MECHANISM FOR GAAS AND OTHER III-V SEMICONDUCTOR-DEVICES, INCLUDING INGAAS LONG WAVELENGTH PHOTODETECTORS [J].