A PROPOSED HYDROGENATION NITRIDIZATION PASSIVATION MECHANISM FOR GAAS AND OTHER III-V SEMICONDUCTOR-DEVICES, INCLUDING INGAAS LONG WAVELENGTH PHOTODETECTORS

被引：95

作者：

CAPASSO, F

WILLIAMS, GF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 04期

关键词：

D O I：

10.1149/1.2123979

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：821 / 824

页数：4

共 18 条

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