VERY LOW REACH-THROUGH VOLTAGE, HIGH-PERFORMANCE ALXGA1-XSBP-I-N PHOTO-DIODES FOR 1.3-MU-M FIBER OPTICAL-SYSTEMS

被引：10

作者：

CAPASSO, F

HUTCHINSON, AL

FOY, PW

BETHEA, C

BONNER, WA

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 09期

关键词：

D O I：

10.1063/1.92874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：736 / 738

页数：3

共 18 条

[1]

BETHEA CG, UNPUBLISHED

[2] INGAASP P-I-N PHOTO-DIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCE [J].

BURRUS, CA ;

DENTAI, AG ;

LEE, TP .

ELECTRONICS LETTERS, 1979, 15 (20) :655-657

[3] INGAASP-INGAAS HETEROJUNCTION P-I-N DETECTORS WITH LOW DARK CURRENT AND SMALL CAPACITANCE FOR 1.3-1.6-MU-M FIBER OPTIC SYSTEMS [J].

CAPASSO, F ;

LOGAN, RA ;

HUTCHINSON, A ;

MANCHON, DD .

ELECTRONICS LETTERS, 1980, 16 (23) :893-895

[4] VERY HIGH QUANTUM EFFICIENCY GASB MESA PHOTODETECTORS BETWEEN 1.3 AND 1.6-MU-M [J].

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :165-167

[5] THE LIQUID-PHASE EPITAXIAL-GROWTH OF LOW NET DONOR CONCENTRATION (5X1014-5X1015-CM3) GASB FOR DETECTOR APPLICATIONS IN THE 1.3-1.6 MU-M REGION [J].

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :273-274

[6]

CAPASSO F, UNPUBLISHED

[7]

Capasso F., 1981, I PHYS C SER, V56, P125

[8]

EDEN RC, 1975, P IEEE, V63, P1

[9] PERFORMANCE OF INXGA1-XASYP1-Y PHOTO-DIODES WITH DARK CURRENT LIMITED BY DIFFUSION, GENERATION RECOMBINATION, AND TUNNELING [J].

FORREST, SR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :217-226

[10] III-V ALLOY HETEROSTRUCTURE HIGH-SPEED AVALANCHE PHOTO-DIODES [J].

LAW, HD ;

NAKANO, K ;

TOMASETTA, LR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) :549-558

← 1 2 →