THE LIQUID-PHASE EPITAXIAL-GROWTH OF LOW NET DONOR CONCENTRATION (5X1014-5X1015-CM3) GASB FOR DETECTOR APPLICATIONS IN THE 1.3-1.6 MU-M REGION

被引：35

作者：

CAPASSO, F

PANISH, MB

SUMSKI, S

机构：

来源：

关键词：

D O I：

10.1109/JQE.1981.1071062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：273 / 274

页数：2

共 6 条

[1]

ANDERSON SJ, 1977, 33B I PHYS C SER, P346

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S ;

FOY, PW .

[3]

HOJO A, 1974, J JAPAN SOC APPL P S, V43, P226

[4] UNDOPED N-TYPE GASB GROWN BY LIQUID-PHASE EPITAXY [J].

MIKI, H ;

SEGAWA, K ;

FUJIBAYASHI, K .

[5] INFRARED REFLECTIVITY MEASUREMENTS ON BULK AND EPITAXIAL GASB [J].

PICKERING, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (15) :2959-2968

[6]

WOELK C, 1974, J CRYST GROWTH, V27, P177, DOI 10.1016/S0022-0248(74)80062-X