VERY LOW REACH-THROUGH VOLTAGE, HIGH-PERFORMANCE ALXGA1-XSBP-I-N PHOTO-DIODES FOR 1.3-MU-M FIBER OPTICAL-SYSTEMS

被引:10
作者
CAPASSO, F
HUTCHINSON, AL
FOY, PW
BETHEA, C
BONNER, WA
机构
关键词
D O I
10.1063/1.92874
中图分类号
O59 [应用物理学];
学科分类号
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页码:736 / 738
页数:3
相关论文
共 18 条
[11]   SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH [J].
LEE, TP ;
BURRUS, CA ;
DENTAI, AG ;
OGAWA, K .
ELECTRONICS LETTERS, 1980, 16 (04) :155-156
[12]  
LEHENY RF, 1979, ELECTRON LETT, V15, P713, DOI 10.1049/el:19790507
[14]   A GA0.47IN0.53AS-INP HETEROPHOTODIODE WITH REDUCED DARK CURRENT [J].
PEARSALL, TP ;
PISKORSKI, M ;
BROCHET, A ;
CHEVRIER, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :255-259
[15]   RECEIVERS FOR OPTICAL COMMUNICATIONS - COMPARISON OF AVALANCHE PHOTO-DIODES WITH PIN-FET HYBRIDS [J].
SMITH, DR ;
HOOPER, RC ;
GARRETT, I .
OPTICAL AND QUANTUM ELECTRONICS, 1978, 10 (04) :293-300
[16]   P-I-N FET HYBRID OPTICAL RECEIVER FOR 1.1-1.6 MU-M OPTICAL COMMUNICATION-SYSTEMS [J].
SMITH, DR ;
CHATTERJEE, AK ;
REJMAN, MAZ ;
WAKE, D ;
WHITE, BR .
ELECTRONICS LETTERS, 1980, 16 (19) :750-751
[17]   P-I-N-FET HYBRID OPTICAL RECEIVER FOR LONGER-WAVELENGTH OPTICAL COMMUNICATION-SYSTEMS [J].
SMITH, DR ;
HOOPER, RC ;
AHMAD, K ;
JENKINS, D ;
MABBITT, AW ;
NICKLIN, R .
ELECTRONICS LETTERS, 1980, 16 (02) :69-71
[18]  
SMITH RG, 1980, SEMICONDUCTOR DEVICE, V39, pCH4