A GA0.47IN0.53AS-INP HETEROPHOTODIODE WITH REDUCED DARK CURRENT

被引：35

作者：

PEARSALL, TP

PISKORSKI, M

BROCHET, A

CHEVRIER, J

机构：

[1] CNRS,LAB BELLEVUE MEUDON,F-92190 BELLEVUE,FRANCE

[2] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期

关键词：

D O I：

10.1109/JQE.1981.1071057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：255 / 259

页数：5

相关论文

共 9 条

[1] INTERBAND MAGNETOABSORPTION OF IN0.53GA0.47AS
ALAVI, K
AGGARWAL, RL
GROVES, SH
[J]. PHYSICAL REVIEW B, 1980, 21 (03): : 1311 - 1315
[2] INGAAS AVALANCHE PHOTO-DIODE WITH INP P-N-JUNCTION
KANBE, H
SUSA, N
NAKAGOME, H
ANDO, H
[J]. ELECTRONICS LETTERS, 1980, 16 (05) : 163 - 165
[3] SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH
LEE, TP
BURRUS, CA
DENTAI, AG
OGAWA, K
[J]. ELECTRONICS LETTERS, 1980, 16 (04) : 155 - 156
[4] LEHENY RF, 1979, ELECTRON LETT, V15, P713, DOI 10.1049/el:19790507
[5] ZN-DIFFUSED IN0.53GA0.47AS-INP AVALANCHE PHOTODETECTOR
MATSUSHIMA, Y
SAKAI, K
AKIBA, S
YAMAMOTO, T
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 466 - 468
[6] GA0.47IN0.53AS HOMOJUNCTION PHOTO-DIODE - NEW AVALANCHE PHOTODETECTOR IN NEAR-INFRARED BETWEEN 1.0 AND 1.6 MU-M
PEARSALL, TP
PAPUCHON, M
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 640 - 642
[7] GA0.47IN0.53AS - A TERNARY SEMICONDUCTOR FOR PHOTODETECTOR APPLICATIONS
PEARSALL, TP
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (07) : 709 - 720
[8] BAND-TO-BAND TUNNELLING CURRENT IN GA0.47 IN0.53 AS P-N-JUNCTIONS
PEARSALL, TP
[J]. ELECTRONICS LETTERS, 1980, 16 (20) : 771 - 773
[9] Smith D. R., 1979, Proceedings of the 1979 International Symposium on circuits and systems, P511