BAND-TO-BAND TUNNELLING CURRENT IN GA0.47 IN0.53 AS P-N-JUNCTIONS

被引：12

作者：

PEARSALL, TP

机构：

来源：

关键词：

D O I：

10.1049/el:19800547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：771 / 773

页数：3

共 12 条

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AGGARWAL, RL
GROVES, SH
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[2] EVIDENCE FOR TUNNELING IN REVERSE-BIASED III-V PHOTODETECTOR DIODES
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SMITH, RG
STOCKER, HJ
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 580 - 582
[3] HERMANN C, 1980, P C PHYSICS SEMICOND
[4] INGAAS AVALANCHE PHOTO-DIODE WITH INP P-N-JUNCTION
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SUSA, N
NAKAGOME, H
ANDO, H
[J]. ELECTRONICS LETTERS, 1980, 16 (05) : 163 - 165
[5] ZENER TUNNELING IN SEMICONDUCTORS
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 181 - 188
[6] LEHENY RF, 1979, ELECTRON LETT, V15, P713, DOI 10.1049/el:19790507
[7] DARK-CURRENT OF IN0.53GA0.47AS-INP MESA-TYPE AVALANCHE PHOTODETECTOR
MATSUSHIMA, Y
SAKAI, K
AKIBA, S
YAMAMOTO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : 573 - 574
[8] INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN
NISHIDA, K
TAGUCHI, K
MATSUMOTO, Y
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 251 - 253
[9] PEARSALL TP, 1978, P 7 INT S GALL ARS R, P94
[10] Smith D. R., 1979, Proceedings of the 1979 International Symposium on circuits and systems, P511