DARK-CURRENT OF IN0.53GA0.47AS-INP MESA-TYPE AVALANCHE PHOTODETECTOR

被引:8
作者
MATSUSHIMA, Y
SAKAI, K
AKIBA, S
YAMAMOTO, T
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D O I
10.1143/JJAP.19.573
中图分类号
O59 [应用物理学];
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页码:573 / 574
页数:2
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  • [1] CHARACTERISTICS OF GERMANIUM AVALANCHE PHOTO-DIODES IN WAVELENGTH REGION OF 1-1.6 MU-M
    ANDO, H
    KANBE, H
    KIMURA, T
    YAMAOKA, T
    KANEDA, T
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (11) : 804 - 809
  • [2] LEE TP, 1979, IEEE J QUANTUM ELECT, V15, P30
  • [3] ZN-DIFFUSED IN0.53GA0.47AS-INP AVALANCHE PHOTODETECTOR
    MATSUSHIMA, Y
    SAKAI, K
    AKIBA, S
    YAMAMOTO, T
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 466 - 468
  • [4] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M
    MIYA, T
    TERUNUMA, Y
    HOSAKA, T
    MIYASHITA, T
    [J]. ELECTRONICS LETTERS, 1979, 15 (04) : 106 - 108
  • [5] GA0.47IN0.53AS HOMOJUNCTION PHOTO-DIODE - NEW AVALANCHE PHOTODETECTOR IN NEAR-INFRARED BETWEEN 1.0 AND 1.6 MU-M
    PEARSALL, TP
    PAPUCHON, M
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 640 - 642
  • [6] GROWTH OF IN0.53GA0.47AS ON (100)-ORIENTED INP FROM SUPERCOOLED SOLUTION
    SAKAI, K
    MATSUSHIMA, Y
    AKIBA, S
    YAMAMOTO, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) : 1009 - 1010
  • [7] SUSA N, 1979, ELECTRON LETT, V15, P239