GROWTH OF IN0.53GA0.47AS ON (100)-ORIENTED INP FROM SUPERCOOLED SOLUTION

被引：10

作者：

SAKAI, K

MATSUSHIMA, Y

AKIBA, S

YAMAMOTO, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 05期

关键词：

D O I：

10.1143/JJAP.18.1009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

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页码：1009 / 1010

页数：2

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[1] IN0.53GA0.47AS-IN1-XGAXASYP1-Y DOUBLE HETEROSTRUCTURE LASERS WITH EMISSION WAVELENGTH OF 1.67MU-M AT ROOM-TEMPERATURE
AKIBA, S
SAKAI, K
YAMAMOTO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) : 1899 - 1900
[2] INCORPORATION OF GA DURING LPE GROWTH OF IN0.53GA0.47AS ON (111)B AND (100) INP SUBSTRATES
ANTYPAS, GA
HOUNG, YM
HYDER, SB
ESCHER, JS
GREGORY, PE
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 463 - 465
[3] HSIEH JJ, 1976, 6TH P INT S GAAS REL, P37
[4] INP-GAXIN1-XASYP1-Y DOUBLE HETEROSTRUCTURE FOR 1.5 MUM WAVELENGTH
NAGAI, H
NOGUCHI, Y
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 234 - 236
[5] GROWTH OF GAXIN1-XAS ON (100) INP BY LIQUID-PHASE EPITAXY
PEARSALL, TP
BISARO, R
ANSEL, R
MERENDA, P
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 497 - 499
[6] GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED EPITAXIAL-FILMS OF GAXIN1-XAS-INP BY LIQUID-PHASE EPITAXY
PEARSALL, TP
HOPSON, RW
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 133 - 146
[7] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAAS ON INP
SANKARAN, R
MOON, RL
ANTYPAS, GA
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) : 271 - 280
[8] ELECTRON-MOBILITY AND ENERGY-GAP OF IN0.53GA0.47AS ON INP SUBSTRATE
TAKEDA, Y
SASAKI, A
IMAMURA, Y
TAKAGI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5405 - 5408