LIQUID-PHASE EPITAXIAL-GROWTH OF INGAAS ON INP

被引:60
作者
SANKARAN, R [1 ]
MOON, RL [1 ]
ANTYPAS, GA [1 ]
机构
[1] VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303
关键词
D O I
10.1016/0022-0248(76)90053-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:271 / 280
页数:10
相关论文
共 25 条
  • [1] LIQUID-PHASE EPITAXY OF INXGA1-XAS
    ANTYPAS, GA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1393 - &
  • [2] TRANSFERRED ELECTRON PHOTOEMISSION FROM INP
    BELL, RL
    JAMES, LW
    MOON, RL
    [J]. APPLIED PHYSICS LETTERS, 1974, 25 (11) : 645 - 646
  • [3] MISFIT DISLOCATION SOURCES IN EPITAXIAL-FILMS .1. GROWTH OF PD ON AU(001) SUBSTRATES
    CHERNS, D
    STOWELL, MJ
    [J]. THIN SOLID FILMS, 1975, 29 (01) : 107 - 125
  • [4] OPTICAL-PROPERTIES OF VAPOR-GROWN INXGA1-X AS EPITAXIAL-FILMS ON GAAS AND INXGA1-XP SUBSTRATES
    ENSTROM, RE
    ZANZUCCHI, PJ
    APPERT, JR
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 300 - 306
  • [5] ENSTROM RE, 1971, 3 P INT S GALL ARS R, P30
  • [6] Escher J. S., 1975, Critical Reviews in Solid State Sciences, V5, P577, DOI 10.1080/10408437508243514
  • [7] METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS
    ETTENBERG, M
    NUESE, CJ
    APPERT, JR
    GANNON, JJ
    ENSTROM, RE
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 37 - 66
  • [8] HALLIWELL MAG, 1973, GAAS RELATED COMPOUN, P98
  • [9] LIQUID-PHASE EPITAXY OF INP
    HESS, K
    STATH, N
    BENZ, KW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1208 - 1212
  • [10] HIRTH JP, 1968, THEORY DISLOCATIONS, P313