SMALL-SIGNAL MODULATION AND TEMPERATURE-DEPENDENCE OF THE TUNNELING INJECTION-LASER

被引：19

作者：

DAVIS, L

SUN, HC

YOON, H

BHATTACHARYA, PK

机构：

[1] Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期

关键词：

D O I：

10.1063/1.111342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, we demonstrated a novel laser structure, called the tunneling injection laser, where the electrons are injected into the active lasing quantum well region via tunneling. High performance results for this device have now been demonstrated. A T(o) of 160 K was found from temperature-dependent measurements (25-70-degrees-C), High differential gain (5.5 X 10(-16) cm2) and modulation bandwidth (12.5 GHz) have been attained relative t) other single quantum well lasers.

引用

页码：3222 / 3224

页数：3

共 14 条

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