SINGLE QUANTUM-WELL STRAINED INGAAS/GAAS LASERS WITH LARGE MODULATION BANDWIDTH AND LOW DAMPING

被引：22

作者：

NAGARAJAN, R

FUKUSHIMA, T

BOWERS, JE

GEELS, RS

COLDREN, LA

机构：

[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara, California

[2] Furukawa Electric Co., Tokyo

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 12期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19910657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained In0.2Ga0.8As/GaAs single quantum well polyimide buried ridge waveguide lasers with 3 dB modulation bandwidths of 15 GHz and gain compression factors epsilon as small as 9.98 x 10(-18) cm-3 have been fabricated. We have also observed that the gain compression factor is not larger than in lasers with bulk active areas, and is lower for structures with a smaller number of wells and shorter cavity lengths.

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页码：1058 / 1060

页数：3

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