PROFILES OF RECOMBINATION AND TRANSPORT PARAMETERS IN THIN SOS FILMS

被引：3

作者：

CRISTOLOVEANU, S ^{[1
]}

CHOVET, A ^{[1
]}

KAMARINOS, G ^{[1
]}

机构：

[1] ECOLE NORM SUPER ELEECTR & RADIOELECT GREENOBLE,CNRS,PHYS COMPOSANTS SEMI COND LAB,F-38031 GRENOBLE,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1978年 / 13卷 / 12期

关键词：

D O I：

10.1051/rphysap:019780013012061500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：615 / 618

页数：4

共 19 条

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[4]

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[5]

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ELLIOT, ABM ;

ANDERSON, JC .

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[8]

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[9] ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE [J].

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[10]

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