IN-DIFFUSION AND ANNEALING OF COPPER IN GERMANIUM

被引：12

作者：

KITAGAWA, H

HASHIMOTO, K

YOSHIDA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 07期

关键词：

D O I：

10.1143/JJAP.21.990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：990 / 993

页数：4

共 22 条

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[3]

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[5]

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[6]

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[9] DEGREE OF COPPER CONTAMINATION IN GERMANIUM HEAT-TREATED AT HIGH-TEMPERATURES [J].

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HASHIMOTO, F .

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[10] DIFFUSION MECHANISM OF NICKEL AND POINT-DEFECTS IN SILICON [J].

KITAGAWA, H ;

HASHIMOTO, K ;

YOSHIDA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02) :276-280

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