DIFFUSION OF GOLD IN SEMI-INFINITE SINGLE-CRYSTALS OF SILICON

[1] BOLTAKS NI, 1960, SOV PHYS-SOLID STATE, V2, P2134

[2] ELECTRICAL PROPERTIES OF N-TYPE SILICON DOPED WITH GOLD [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 314 - &

[3] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[4] GOLD-INDUCED CLIMB OF DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2275 - 2283

[5] DORWARD RC, 1968, T METALL SOC AIME, V242, P2055

[6] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3148 - &

[7] MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J]. PHYSICAL REVIEW, 1956, 104 (03): : 617 - 618

[8] METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 890 - +

[9] GHOSHTAGORE RN, 1971, PHYS REV, V133, P397

[10] SURFACE DIFFUSION OF GOLD ON SILICON [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 641 - +

[1] BOLTAKS NI, 1960, SOV PHYS-SOLID STATE, V2, P2134

[2] ELECTRICAL PROPERTIES OF N-TYPE SILICON DOPED WITH GOLD [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 314 - &

[3] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[4] GOLD-INDUCED CLIMB OF DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2275 - 2283

[5] DORWARD RC, 1968, T METALL SOC AIME, V242, P2055

[6] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3148 - &

[7] MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J]. PHYSICAL REVIEW, 1956, 104 (03): : 617 - 618

[8] METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 890 - +

[9] GHOSHTAGORE RN, 1971, PHYS REV, V133, P397

[10] SURFACE DIFFUSION OF GOLD ON SILICON [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 641 - +