SELF STABILIZATION OF THE FUNDAMENTAL LATERAL-MODE IN INDEX GUIDED SEMICONDUCTOR-LASERS

被引:12
作者
GARRETT, B
WHITEAWAY, JEA
机构
来源
IEE PROCEEDINGS-J OPTOELECTRONICS | 1987年 / 134卷 / 01期
关键词
D O I
10.1049/ip-j.1987.0004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:11 / 15
页数:5
相关论文
共 16 条
[1]  
AIKI K, 1977, APPL PHYS LETT, V48, P649
[2]   LATERAL-MODE DISCRIMINATION AND CONTROL IN HIGH-POWER SINGLE-MODE DIODE-LASERS OF THE LARGE-OPTICAL-CAVITY (LOC) TYPE [J].
BUTLER, JK ;
BOTEZ, D .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) :879-891
[4]  
BUUS J, 1977, 7TH P EUR MICR C COP, P27
[5]   SINGLE-LONGITUDINAL-MODE METALORGANIC CHEMICAL-VAPOR-DEPOSITION SELF-ALIGNED GAALAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS [J].
COLEMAN, JJ ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :262-263
[6]  
GARRETT B, 1987, IN PRESS IEE P J OPT, V134
[7]   GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG JUNCTION PLANE [J].
HAKKI, BW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :292-302
[8]  
HENSHALL GD, 1977, I PHYS C A, V33, P388
[9]   OBSERVATIONS OF SELF-FOCUSING IN STRIPE GEOMETRY SEMICONDUCTOR-LASERS AND DEVELOPMENT OF A COMPREHENSIVE MODEL OF THEIR OPERATION [J].
KIRKBY, PA ;
GOODWIN, AR ;
THOMPSON, GHB ;
SELWAY, PR .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :705-719
[10]   ABOVE-THRESHOLD ANALYSIS OF DOUBLE-HETEROSTRUCTURE DIODE-LASERS WITH LATERALLY TAPERED ACTIVE REGIONS [J].
STREIFER, W ;
SCIFRES, DR ;
BURNHAM, RD .
APPLIED PHYSICS LETTERS, 1980, 37 (10) :877-879