ANALYSIS OF TRANSISTOR SECOND BREAKDOWN

[1] SOME NEW ASPECTS OF THERMAL INSTABILITY OF CURRENT DISTRIBUTION IN POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 630 - +

[2] MESOPLASMAS AND 2ND BREAKDOWN IN SILICON JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (05) : 511 - 521

[3] ANALYSIS OF SECOND BREAKDOWN IN TRANSISTORS USING A SIMPLE MODEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 778 - +

[4] SECONDARY BREAKDOWN IN TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (04) : 439 - &

[5] SECOND BREAKDOWN IN FORWARD AND REVERSE BASE CURRENT REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 655 - &

[6] SHAFT HA, 1967, P IEEE, V55, P1272

[1] SOME NEW ASPECTS OF THERMAL INSTABILITY OF CURRENT DISTRIBUTION IN POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 630 - +

[2] MESOPLASMAS AND 2ND BREAKDOWN IN SILICON JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (05) : 511 - 521

[3] ANALYSIS OF SECOND BREAKDOWN IN TRANSISTORS USING A SIMPLE MODEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 778 - +

[4] SECONDARY BREAKDOWN IN TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (04) : 439 - &

[5] SECOND BREAKDOWN IN FORWARD AND REVERSE BASE CURRENT REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 655 - &

[6] SHAFT HA, 1967, P IEEE, V55, P1272