MESOPLASMAS AND 2ND BREAKDOWN IN SILICON JUNCTIONS

[1] HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS [J]. JOURNAL OF APPLIED PHYSICS, 1949, 20 (08) : 804 - 815

[2] EFFECT OF MINORITY CARRIERS ON THE BREAKDOWN OF POINT CONTACT RECTIFIERS [J]. PHYSICAL REVIEW, 1952, 87 (06): : 1060 - 1061

[3] PROPERTIES OF SILICON AND GERMANIUM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1327 - 1337

[4] CREEP AND FORMING IN SELENIUM RECTIFIERS [J]. SOLID-STATE ELECTRONICS, 1960, 1 (03) : 245 - 249

[5] MESOPLASMA BREAKDOWN IN SILICON JUNCTIONS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 500 - +

[6] ENGLISH AC, 1955, IRE C SEMICONDUCTOR

[7] ENGLISH AC, 1960, COMMUN ELECTRON, V79, P9

[8] UNIFORM AVALANCHE EFFECT IN SILICON 3-LAYER DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2260 - 2261

[9] Ioffe A. F., 1960, PROGRESSES SEMICONDU, V4, P237

[10] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1. [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) : 835 - 848

[1] HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS [J]. JOURNAL OF APPLIED PHYSICS, 1949, 20 (08) : 804 - 815

[2] EFFECT OF MINORITY CARRIERS ON THE BREAKDOWN OF POINT CONTACT RECTIFIERS [J]. PHYSICAL REVIEW, 1952, 87 (06): : 1060 - 1061

[3] PROPERTIES OF SILICON AND GERMANIUM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1327 - 1337

[4] CREEP AND FORMING IN SELENIUM RECTIFIERS [J]. SOLID-STATE ELECTRONICS, 1960, 1 (03) : 245 - 249

[5] MESOPLASMA BREAKDOWN IN SILICON JUNCTIONS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 500 - +

[6] ENGLISH AC, 1955, IRE C SEMICONDUCTOR

[7] ENGLISH AC, 1960, COMMUN ELECTRON, V79, P9

[8] UNIFORM AVALANCHE EFFECT IN SILICON 3-LAYER DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2260 - 2261

[9] Ioffe A. F., 1960, PROGRESSES SEMICONDU, V4, P237

[10] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1. [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) : 835 - 848