LATERAL DOPANT PROFILING IN SEMICONDUCTORS BY FORCE MICROSCOPY USING CAPACITIVE DETECTION

Recently, high-resolution mapping of dopant concentration has been demonstrated with the scanning capacitance microscope (SCM). Here, we demonstrate that a similar measurement can be made with the atomic force microscope using the previously demonstrated capacitive force sensing mode. By applying appropriate bias to the force tip, depletion-induced capacitive variation is mapped over regions of varying dopant density. This method has a predicted sensitivity comparable to the SCM, and in addition allows imaging of trapped charge, as well as an independent measurement of the surface topography. Results of first-order model calculations are presented which give estimates as to the limits in sensitivity and resolution of this method.