A STAINING TECHNIQUE FOR THE STUDY OF TWO-DIMENSIONAL DOPANT DIFFUSION IN SILICON

[1] BARRETT CS, 1966, STRUCTURE METALS, P416

[2] Gilman J.J., 1960, PLASTICITY, P43, DOI [10.1016/B978-0-08-009459-5.50008-9, DOI 10.1016/B978-0-08-009459-5.50008-9]

[3] PLUMMER JD, 1986, COMPUTER CODE SUPREM

[4] APPARATUS FOR MEASUREMENT OF SMALL ANGLES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (02) : 320 - +

[5] DIRECT OBSERVATIONS OF N-MOSFET CHANNEL LENGTHS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (05) : 1258 - 1260

[6] JUNCTION DELINEATION ON SILICON IN ELECTROCHEMICAL DISPLACEMENT PLATING SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (08) : 701 - 705

[7] TECHNIQUES FOR LAPPING AND STAINING ION-IMPLANTED LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : 1982 - 1988

[8] ASTM F11084 AM SOC T

[1] BARRETT CS, 1966, STRUCTURE METALS, P416

[2] Gilman J.J., 1960, PLASTICITY, P43, DOI [10.1016/B978-0-08-009459-5.50008-9, DOI 10.1016/B978-0-08-009459-5.50008-9]

[3] PLUMMER JD, 1986, COMPUTER CODE SUPREM

[4] APPARATUS FOR MEASUREMENT OF SMALL ANGLES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (02) : 320 - +

[5] DIRECT OBSERVATIONS OF N-MOSFET CHANNEL LENGTHS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (05) : 1258 - 1260

[6] JUNCTION DELINEATION ON SILICON IN ELECTROCHEMICAL DISPLACEMENT PLATING SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (08) : 701 - 705

[7] TECHNIQUES FOR LAPPING AND STAINING ION-IMPLANTED LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : 1982 - 1988

[8] ASTM F11084 AM SOC T