DIRECT OBSERVATIONS OF N-MOSFET CHANNEL LENGTHS

被引:13
作者
TSENG, WF
WILKINS, BR
机构
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D O I
10.1149/1.2100653
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1258 / 1260
页数:3
相关论文
共 5 条
  • [1] CHERN JGJ, 1980, IEEE ELECTRON DEVICE, V1, P107
  • [2] KARNETT MP, COMMUNICATION
  • [3] AN IMPROVED METHOD TO DETERMINE MOSFET CHANNEL LENGTH
    PENG, KL
    AFROMOWITZ, MA
    [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 360 - 362
  • [4] FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY
    TSANG, PJ
    OGURA, S
    WALKER, WW
    SHEPARD, JF
    CRITCHLOW, DL
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 590 - 596
  • [5] A MODIFICATION ON AN IMPROVED METHOD TO DETERMINE MOSFET CHANNEL LENGTH
    WHITFIELD, J
    [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 109 - 110