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DIRECT OBSERVATIONS OF N-MOSFET CHANNEL LENGTHS
被引:13
作者
:
TSENG, WF
论文数:
0
引用数:
0
h-index:
0
TSENG, WF
WILKINS, BR
论文数:
0
引用数:
0
h-index:
0
WILKINS, BR
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1987年
/ 134卷
/ 05期
关键词
:
D O I
:
10.1149/1.2100653
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1258 / 1260
页数:3
相关论文
共 5 条
[1]
CHERN JGJ, 1980, IEEE ELECTRON DEVICE, V1, P107
[2]
KARNETT MP, COMMUNICATION
[3]
AN IMPROVED METHOD TO DETERMINE MOSFET CHANNEL LENGTH
PENG, KL
论文数:
0
引用数:
0
h-index:
0
PENG, KL
AFROMOWITZ, MA
论文数:
0
引用数:
0
h-index:
0
AFROMOWITZ, MA
[J].
ELECTRON DEVICE LETTERS,
1982,
3
(12):
: 360
-
362
[4]
FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY
TSANG, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
TSANG, PJ
OGURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
OGURA, S
WALKER, WW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
WALKER, WW
SHEPARD, JF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
SHEPARD, JF
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
CRITCHLOW, DL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 590
-
596
[5]
A MODIFICATION ON AN IMPROVED METHOD TO DETERMINE MOSFET CHANNEL LENGTH
WHITFIELD, J
论文数:
0
引用数:
0
h-index:
0
WHITFIELD, J
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
: 109
-
110
←
1
→
共 5 条
[1]
CHERN JGJ, 1980, IEEE ELECTRON DEVICE, V1, P107
[2]
KARNETT MP, COMMUNICATION
[3]
AN IMPROVED METHOD TO DETERMINE MOSFET CHANNEL LENGTH
PENG, KL
论文数:
0
引用数:
0
h-index:
0
PENG, KL
AFROMOWITZ, MA
论文数:
0
引用数:
0
h-index:
0
AFROMOWITZ, MA
[J].
ELECTRON DEVICE LETTERS,
1982,
3
(12):
: 360
-
362
[4]
FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY
TSANG, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
TSANG, PJ
OGURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
OGURA, S
WALKER, WW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
WALKER, WW
SHEPARD, JF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
SHEPARD, JF
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
CRITCHLOW, DL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 590
-
596
[5]
A MODIFICATION ON AN IMPROVED METHOD TO DETERMINE MOSFET CHANNEL LENGTH
WHITFIELD, J
论文数:
0
引用数:
0
h-index:
0
WHITFIELD, J
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
: 109
-
110
←
1
→