AN IMPROVED METHOD TO DETERMINE MOSFET CHANNEL LENGTH

被引：25

作者：

PENG, KL

AFROMOWITZ, MA

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 12期

关键词：

D O I：

10.1109/EDL.1982.25600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：360 / 362

页数：3

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[1] SHORT-CHANNEL MOSFETS IN THE PUNCHTHROUGH CURRENT MODE
BARNES, JJ
SHIMOHIGASHI, K
DUTTON, RW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 446 - 453
[2] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH
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CHANG, P
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[3] MEASUREMENT OF MOSFET CONSTANTS
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KOTECHA, HN
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[J]. ELECTRON DEVICE LETTERS, 1982, 3 (01): : 10 - 12
[4] AN OPTIMALLY DESIGNED PROCESS FOR SUBMICROMETER MOSFETS
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HIEDA, K
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 531 - 535
[5] EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS
SUCIU, PI
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1846 - 1848
[6] NEW METHOD TO DETERMINE EFFECTIVE MOSFET CHANNEL LENGTH
TERADA, K
MUTA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) : 953 - 959