NEW METHOD TO DETERMINE EFFECTIVE MOSFET CHANNEL LENGTH

被引:204
作者
TERADA, K
MUTA, H
机构
[1] Central Research Labs, Nippon Electric Co.Ltd
关键词
D O I
10.1143/JJAP.18.953
中图分类号
O59 [应用物理学];
学科分类号
摘要
An accurate and convenient method to determine an effective MOSFET channel length is proposed. This method is based on a computer aided evaluation of an intrinsic MOSFET channel resistance without using special test devices. N-channel silicon-gate MOSFETs were fabricated, and the channel length and its range of device to device scatter were evaluated. To define an effective channel, a simple model of the source-drain (S-D) diffusion layer is proposed. This modelshows that the expected transition layer resistance between the S-D diffusion layer and the inverted channel layer agrees with the experimental results. The accuracy of this method is also discussed. It is found to be better than 0.1 µm. © 1979 IOP Publishing Ltd.
引用
收藏
页码:953 / 959
页数:7
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