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IMPROVED POLISHING TECHNIQUE FOR GAAS
被引:18
作者
:
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
RIDEOUT, VL
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1972年
/ 119卷
/ 12期
关键词
:
D O I
:
10.1149/1.2404099
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1778 / &
相关论文
共 4 条
[1]
EVALUATION OF A NEW POLISH FOR GALLIUM ARSENIDE USING A PEROXIDE-ALKALINE SOLUTION
DYMENT, JC
论文数:
0
引用数:
0
h-index:
0
DYMENT, JC
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
ROZGONYI, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(08)
: 1346
-
&
[2]
SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
ESAKI, L
TSU, R
论文数:
0
引用数:
0
h-index:
0
TSU, R
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1970,
14
(01)
: 61
-
&
[3]
ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
ROHR, R
论文数:
0
引用数:
0
h-index:
0
ROHR, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
: 1425
-
1428
[4]
Reisman A., 1967, U.S. Pat, Patent No. [3,342,652 A, 3342652]
←
1
→
共 4 条
[1]
EVALUATION OF A NEW POLISH FOR GALLIUM ARSENIDE USING A PEROXIDE-ALKALINE SOLUTION
DYMENT, JC
论文数:
0
引用数:
0
h-index:
0
DYMENT, JC
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
ROZGONYI, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(08)
: 1346
-
&
[2]
SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
ESAKI, L
TSU, R
论文数:
0
引用数:
0
h-index:
0
TSU, R
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1970,
14
(01)
: 61
-
&
[3]
ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
ROHR, R
论文数:
0
引用数:
0
h-index:
0
ROHR, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
: 1425
-
1428
[4]
Reisman A., 1967, U.S. Pat, Patent No. [3,342,652 A, 3342652]
←
1
→