CORRECTION

被引：8

作者：

CLABES, JG

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 02期

关键词：

D O I：

10.1116/1.571117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：262 / 263

页数：2

共 13 条

[1]

AONO M, UNPUBLISHED

[2]

BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[3] NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE [J].

CHEUNG, NW ;

CULBERTSON, RJ ;

FELDMAN, LC ;

SILVERMAN, PJ ;

WEST, KW ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1980, 45 (02) :120-124

[4]

Clabes J. G., 1981, Journal of Vacuum Science and Technology, V18, P903, DOI 10.1116/1.570989

[5]

CRIDER CA, 1980, ELECTROCHEM SOC P, V80, P135

[6]

FOLL H, J APPL PHYS

[7] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].

FREEOUF, JL ;

RUBLOFF, GW ;

HO, PS ;

KUAN, TS .

PHYSICAL REVIEW LETTERS, 1979, 43 (24) :1836-1839

[8] XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE [J].

GRUNTHANER, PJ ;

GRUNTHANER, FJ ;

MAYER, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :924-929

[9]

MILLER JN, 1980, J VAC SCI TECHNOL, V17, P1005

[10]

RUBLOFF GW, 1980, 4TH P INT C SOL SURF

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