HREM OBSERVATIONS OF ION BOMBARDMENT-INDUCED DISLOCATION LOOPS IN ZNO

被引：4

作者：

COUDERC, JJ ^{[1
]}

DEMAI, JJ ^{[1
]}

VANDERSCHAEVE, G ^{[1
]}

PEIGNEY, A ^{[1
]}

机构：

[1] UNIV TOULOUSE 3,CNRS,ERA 1311,CHIM MAT INORGAN LAB,F-31062 TOULOUSE,FRANCE

来源：

MICROSCOPY MICROANALYSIS MICROSTRUCTURES | 1995年 / 6卷 / 02期

关键词：

D O I：

10.1051/mmm:1995101

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

High resolution electron microscopy (HREM) is used to show faulted dislocation loops resulting from ion bombardment thinning in ZnO. The stacking faults are created by the insertion of a Zn-O double layer in the basal plane and are of the 1 Delta type (complex stacking fault).

引用

页码：229 / 235

页数：7

共 17 条

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