THRESHOLD BEHAVIOR OF (GAAL)AS-GAAS LASERS AT LOW-TEMPERATURES

[1] ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, P6

[2] ALFEROV ZI, 1970, SOV PHYS SEMICOND, V3, P1107

[3] BIARD JR, 1964, T METALL SOC AIME, V230, P286

[4] BONCHBRUEVICH VL, 1966, SEMICONDUCT SEMIMET, V1, P101

[5] BROOKS H, 1951, PHYS REV, V83, P879

[6] DISTRIBUTION OF ENERGY STATES AT BAND EDGES IN GAAS LASER DIODES [J]. SOLID-STATE ELECTRONICS, 1969, 12 (10) : 787 - +

[7] DINGLE RB, 1955, PHILOS MAG, V46, P831

[8] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 174 - &

[9] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &

[10] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &

[1] ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, P6

[2] ALFEROV ZI, 1970, SOV PHYS SEMICOND, V3, P1107

[3] BIARD JR, 1964, T METALL SOC AIME, V230, P286

[4] BONCHBRUEVICH VL, 1966, SEMICONDUCT SEMIMET, V1, P101

[5] BROOKS H, 1951, PHYS REV, V83, P879

[6] DISTRIBUTION OF ENERGY STATES AT BAND EDGES IN GAAS LASER DIODES [J]. SOLID-STATE ELECTRONICS, 1969, 12 (10) : 787 - +

[7] DINGLE RB, 1955, PHILOS MAG, V46, P831

[8] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 174 - &

[9] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &

[10] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &