SCHOTTKY-BARRIER HEIGHTS OF TRANSITION-METAL-SILICIDE SILICON CONTACTS STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY MEASUREMENTS

被引：31

作者：

HIROSE, K

OHDOMARI, I

UDA, M

机构：

[1] WASEDA UNIV,SHINAGAWA KU,TOKYO 160,JAPAN

[2] INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.37.6929

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6929 / 6932

页数：4

共 25 条

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